PART |
Description |
Maker |
SB30-45-25 SB30-40-258RM SB30-40-258M SB30-40-258A |
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Common Anode)(双肖特基势垒二极HI-REL应用,TO258金属封装,共阳极连) 双肖特基二极管在TO258金属封装,高可靠性的应用(共阳极)(双肖特基势垒二极管(高可靠性应用,TO258金属封装,共阳极连接)) DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-258AA Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Series Connection)(双肖特基势垒二极HI-REL应用,TO258金属封装,串行连接)) Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Common Cathode)(双肖特基势垒二极HI-REL应用,TO258金属封装,共阴极连)
|
SEMELAB LTD TT electronics Semelab, Ltd. TT electronics Semelab Limited Semelab(Magnatec) SEME-LAB[Seme LAB]
|
5082-2271 50822271 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
1SS351-TB-E |
Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP
|
ON Semiconductor
|
MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
MBR10100CT MBR10200CT |
10A SCHOTTKY BARRIER DIODE Dual High Voltage Schottky Rectifier
|
Tak Cheong Electronics (Holdings) Co.,Ltd
|
KDR720S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(FOR HIGH SPEED SWITCHING CIRCUIT, FOR SMALL CURRENT RECTIFICATION)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
SB30-100RM SB30-100MA SB30-100AM |
DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
|
SEME-LAB[Seme LAB] TT electronics Semelab, Ltd.
|
BAS70-04LT1G BAS70-04LT1 BAS70-04L |
Dual Series Schottky Barrier Diode(70V双肖特基势垒二极 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
|
ONSEMI[ON Semiconductor]
|
NSVMMBD352WT1G |
Dual Schottky Barrier Diode
|
ON Semiconductor
|